Semiconductor Wafer 3D Metrology and Internal Transmissive Optical Inspection Technology

High-Speed Nanoscale Inspection Technology for Advanced Packaging Micro-Bumps Application

In semiconductor and other high-precision component inspection fields, white light interferometry has become the mainstream solution. However, commercial systems are typically limited by single-lens, small-field-of-view architectures, resulting in insufficient inspection speed and inability to meet mass production requirements, which in turn creates a bottleneck for high-precision manufacturing processes. This technology introduces a first-of-its-kind MEMS-based micro array white light interferometric lens module, adopting a parallel-array architecture to enable multi-channel synchronous scanning. As a result, inspection efficiency is improved by at least 4x while maintaining nanoscale precision.

The system integrates AI-based adaptive signal processing algorithms to compensate for inter-channel noise and signal variations. Combined with an off-axis optical lever design and real-time focus control, it precisely adjusts lens coplanarity to 1.29 μm, achieving ≤10 nm inspection accuracy and simultaneous large-field measurement of 1.2 mm × 1.2 mm. This technology breaks the trade-off between field size and precision, providing a key solution for rapid nanoscale inspection.

Advanced Non-Destructive Inspection for Compound Semiconductor Wafers Application

Demand for power amplifiers (PA) continues to grow with the expansion of 5G, Low-Earth Orbit (LEO) satellite, and Wi-Fi 7 applications. As compound semiconductor and MEMS processes scale down, internal 3D recessed conductive structures within wafers become increasingly susceptible to lithography exposure energy variations, resulting in defects such as structural collapse and bridging shorts. This drives an urgent need for an in-line, real-time, high-precision inspection and metrology solution.

Conventional SEM cross-section inspection is destructive and limited to offline laboratory sampling, while existing optical inspection is compromised by shadowing and reflection interference, leading to blurred images and insufficient measurement accuracy.

To address these challenges, ITRI has developed Advanced Non-Destructive Inspection Technology, featuring a proprietary dynamic fusion imaging approach that mitigates shadowing and reflection effects and reconstructs clear images of internal wafer structures within 15 seconds. Combined with a deep-learning AI model for analysis and error correction, the solution delivers 0.3 μm high-precision metrology and enables non-contact, in-line, real-time inspection. The technology resolves key challenges in inspecting internal structures of compound semiconductor wafers and helps equipment manufacturers strengthen advanced transmissive optical capabilities, enhancing the competitiveness of Taiwan-made tools.